Product category: Power Supply ICs and Controllers
News Release from: Clare | Subject: CPC5603C
Edited by the Electronicstalk Editorial Team on 20 April 2006
MOSFET powers up
phone line interface IC
The CPC5603C N-channel depletion mode MOSFET serves as a hook switch and linear regulator for Litelink III phone line interface IC applications
New from Clare, the CPC5603C N-channel depletion mode MOSFET serves as a hook switch and linear regulator for Litelink III phone line interface IC applications. The CPC5603C device provides an increased drain-to-source breakdown voltage of 415V which is ideal for ITU-T K.21 enhanced level power contact testing as compared with the standard 350V CPC5602C MOSFET device.
This article was originally published on Electronicstalk on 20 April 2006 at 8.00am (UK)
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Meant to simulate AC power lines crossing telephone lines, the enhanced level power contact is a survival test that subjects the phone application circuit to 15 minutes of a 230V RMS source.
The CPC5603C eliminates the need for expensive PTC protection devices on the tip-ring input of the phone line.
Mark Heisig, Clare's General Manager, said: 'The CPC5603C MOSFET for Litelink applications survives enhanced level power contact testing and saves the customer additional bill-of-material (BOM) costs'.
'Robustness and price savings are critical for OEMs given the high deployment of enterprise and consumer VoIP products with a public switch telephone network (PSTN) interface'.
Litelink phone line interface ICs are used as data access arrangements (DAA) for various telephony and modem applications.
Currently, Litelink ICs have been designed-in extensively into foreign exchange office (FXO) port applications for voice over internet protocol (VoIP) gateways and IP-PBXs.
FXOs enable the convergence of network and PSTN connections offering the user maximum flexibility with existing telephony and networking hardware.
The CPC5603C N-channel depletion mode device uses Clare's third generation vertical DMOS process, offering high voltage MOSFET performance in an economical silicon gate process.
The higher breakdown voltage coupled with low on resistance and low gate-to-source threshold voltage provides an ideal linear regulator for the internal Litelink voltage reference as well as telephone hook switch control.
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