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Product category: Analogue and Mixed Signal ICs
News Release from: Avago Technologies | Subject: ATF-58143
Edited by the Electronicstalk Editorial Team on 06 May 2003

Single-voltage transistor simplifies
basestations

Agilent Technologies has a new high-linearity E-pHEMT FET for low-noise high-dynamic-range operation in cost-sensitive wireless infrastructure applications between 450MHz and 6GHz.

Agilent Technologies has a new high-linearity E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) FET for low-noise high-dynamic-range operation in cost-sensitive wireless infrastructure applications between 450MHz and 6GHz At 3V, 30mA and 2GHz, the single-voltage Agilent ATF-58143 E-pHEMT FET features 0.5dB noise figure with +16.5dB associated gain, combined with +30.5dBm third-order output intercept point (OIP3) and +16.5dBm linear output power (1dB gain compression)