Product category: Optoelectronic Sensors, Switches and Receivers
News Release from: AP Technologies | Subject: ODA-5W-100M
Edited by the Electronicstalk Editorial Team on 4 January 2007
Silicon photodiode takes preamp onboard
Opto Diode Corporation's ODA-5W-100M combines a high responsivity 5mm2 active area silicon photodiode with a 100Mohm preamplifier
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Silicon photodiodes join the range
AP Technologies is extending its long and successful relationship with Opto Diode Corporation to include the company's range of silicon photodiodes
AP Technologies is pleased to announce the international release of Opto Diode Corporation's ODA-5W-100M which combines a high responsivity 5mm2 active area silicon photodiode with a 100Mohm preamplifier. Typical applications for these high sensitivity devices are fluorescence spectroscopy and low-light-level tasks where electrical noise can affect the photodiode signal if the detector and amplifier are separate components on a circuit board.
The standard red/NIR-enhanced device has a responsivity of 40V/uW at 660nm - visible enhanced versions can also be supplied.
The ODA-5W-100 operates from +/-15V and is supplied in a hermetically sealed 4+1 lead TO-5 window package and has a frequency response of 1kHz, a low offset voltage of +/- 1mV and dark offset noise of 5mV RMS.
Martin Sharratt, Managing Director of APT said: 'As well as being an exciting product in its own right the addition of the ODA-5W-100 provides a platform for a wide range of application-specific solutions by optimising the detector geometry and feedback circuitry'.
The ODA-5W-100M is manufactured at Opto Diode's state-of-the-art facility in Newbury Park, California in the Class 1000 cleanroom and high volume fully automated packaging facility.
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